silicon epitaxial planar diodes of 2 1 features maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified low capacitance. (c = 0.97 pf max) high reliability with glass seal. reverse voltage v r 10 v peak forward current i fm 35 ma average rectified current i o 15 ma power dissipation pd 150 mw junction temperature tj 100 c storage temperature tstg ? 55 to +100 c v f1 365 ? 430 i f = 1 ma forward voltage v f2 520 ? 600 mv i f = 10 ma i r1 ? ? 0.2 v r = 2 v reverse current i r2 ? ? 10 a v r = 10 v capacitance c ? ? 0.97 pf v r = 0 v, f = 1 mhz capacitance deviation *3 ? c ? ? 0.1 pf v r = 0 v, f = 1 mhz ? v f1 ? ? 10 i f = 2.5 ma forward voltage deviation *3 ? v f2 ? ? 10 mv i f = 10 ma esd-capability *1 ? 30 ? ? v c = 200 pf, r = 0 ? , both forward and reverse direction 1 pulse. notes: 1. failure criterion ; i r 50 a at v r = 10 v 2. each group shall unify a multiple of 4 diodes. 3. not applied to taping-type products. 1SS88 0.079(2.0) max 0.020(0.52) typ 0.165 (4.2) max 1.0 2(26.0) min. 1.0 2(26.0) min. do-35(glass) dimensions in millimeters www.sunmate.tw mechanical data case: do-35, glass case polarity: color band denotes cathode weight: 0.004 ounces, 0.13 grams ! ! ! ! ! symbol value unit symbol min typ max unit test condition characteristic characteristic
2of2 0.1 10 02 10 8 6 4 1.0 0 0.2 0.4 0.6 0.8 1.0 10 -1 10 -2 10 -3 10 -4 forward current i f (a) 10 -5 10 -6 fig.1 forward current vs. forward voltage forward voltage v f (v) 10 -5 10 -6 10 -7 10 -8 10 -9 reverse current i r (a) fig.2 reverse current vs. reverse voltage reverse voltage v r (v) 10 1.0 0.1 capacitance c (pf) fig.3 capacitance vs. reverse voltage reverse voltage v r (v) f = 1mhz www.sunmate.tw
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